![]() ![]() This low carrier concentration is similar to an intrinsic (perfectly undoped) crystal, but much easier to achieve in practice. ![]() The electronic properties of these defects (interacting with others) cause the Fermi level to be pinned to near the center of the band gap, so that this GaAs crystal has very low concentration of electrons and holes. In the presence of excess arsenic, GaAs boules grow with crystallographic defects specifically, arsenic antisite defects (an arsenic atom at a gallium atom site within the crystal lattice). The surface can be passivated by depositing a cubic gallium(II) sulfide layer using a tert-butyl gallium sulfide compound such as ( t Oxidation of GaAs occurs in air, degrading performance of the semiconductor.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |